Vishay VS-3C05ET12T-M3 1200 V SiC Schottky Diode and 16 Others

Vishay Intertechnology has introduced 16 types of 1200 V silicon carbide (SiC) Schottky diodes, the company's third generation products. They use an embedded MPS structure and are available in current ratings from 5 to 40A.

Jul 17, 2024 09:00 AM Published.

[ EDN Japan]

Vishay Intertechnology announced in June 2024 the company's third generation of 16 1200 V silicon carbide (SiC) Schottky diodes. Samples and products are already available, with a standard delivery time of 13 weeks for mass production.

1200 V SiC Schottky diodes Source: Vishay Intertechnology

Low capacitive charge up to 28nC and forward voltage drop of 1.35V

　The embedded MPS (Merged PIN Schottky) structure is used, and the devices are configured with current ratings from 5 to 40A. Provides low capacitive charge up to 28nC and forward voltage drop down to 1.35V. Typical reverse leakage current is 2.5 µA at 25°C. Reduces conduction losses and increases system efficiency at light loads and idling. Operating temperature is up to +175°C and forward surge current is up to 260A for high durability.

Available in TO-220AC 2L, TO-247AD 2L, TO-247AD 3L through-hole, and ^D2PAK 2L (TO-263AB 2L) surface mount packages. 2000 hours high temperature reverse bias test and 2000 temperature cycling tests are available.

Key applications are expected to include FBPS in solar inverters, AC-DC PFC in LLC converters, DC-DC very high frequency output rectification, energy storage systems, industrial drives, and data centers.